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APTGT300A170
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1
VCES = 1700V IC = 300A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
OUT
Q2 G2
E2 0/VBUS
G1 E1
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
600A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT300A170 - Rev 0
May, 2005
Max ratings 1700 400 300 600 20 1660
Unit V A V W
APTGT300A170
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 750 2.4 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A R G = 2.2
Min
Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96 94
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 750 1000
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1700V
50% duty cycle
IF = 300A IF = 300A VR = 900V
di/dt =3200A/s
300 1.8 1.9 385 490 80 128
2.2
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT300A170 - Rev 0
APTGT300A170
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.075 0.14 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3400 -40 -40 -40 3 2
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT300A170 - Rev 0
May, 2005
APTGT300A170
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 600 500 400 IC (A)
T J=125C VGE =13V T J = 125C VGE =20V
600 500
IC (A)
TJ=25C
400 300 200 100 0 0 1 2 V CE (V) 3 4
300
VGE=15V
200 100 0 0 1 2 3 V CE (V) 4 5
V GE=9V
600 500 400 300 200 100 0 5 6
Transfert Characteristics
TJ =25C
240 200 160
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 2.2 TJ = 125C Eon Eoff Er
TJ=125C
E (mJ)
IC (A)
120 80
TJ =125C
40 0
7
8
9
10
11
12
13
0
100
200
300 IC (A)
400
500
600
VGE (V) Switching Energy Losses vs Gate Resistance 240 200 160 E (mJ) 120 80 40 0 0 3 6 9 12 Gate Resistance (ohms) 15
VCE = 900V VGE =15V IC = 300A T J = 125C Eon
Reverse Bias Safe Operating Area 700 600 500
Eoff Er
IC (A)
400 300 200 100 0 0 400 800 1200 1600 2000 VCE (V)
VGE =15V T J=125C RG=2.2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7 IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT300A170 - Rev 0
May, 2005
APTGT300A170
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20
ZCS ZVS VCE =900V D=50% RG =2.2 T J=125C T C=75C
Forward Characteristic of diode 600 500
TJ=25C
15
400 IC (A) 300
T J=125C
10
200 5
hard switching
100 0
TJ =125C
0 0 80 160 240 IC (A) 320 400 480
0
0.5
1
1.5 V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT300A170 - Rev 0
May, 2005

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